View BSH121_953043.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 -- 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSH121 in SOT323.
2. Features
s s s s TrenchMOSTM technology Very fast switching Low threshold voltage Subminiature surface mount package.
3. Applications
s Battery management s High speed switch s Logic level translator.
c c
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT323, simplified outline and symbol Description gate (g)
3
d
Simplified outline
Symbol
source (s) drain (d)
g
1 Top view
2
MBC870
s
03ab30
SOT323
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tsp = 25 C; VGS = 4.5 V Tsp = 25 C VGS = 4.5 V; ID = 500 mA VGS = 2.5 V; ID = 75 mA VGS = 1.8 V; ID = 75 mA Typ - - - - 2.3 2.4 3.1 Max 55 300 0.7 150 4.0 5.0 8.0 Unit V mA W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tsp = 25 C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 C; VGS = 4.5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min - - - - - - - -65 -65 - - Max 55 55 8 300 194 1.2 0.7 +150 +150 300 1.2 Unit V V V mA mA A W C C mA A
Source-drain diode
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
2 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
03aa17
120
P der (%) 100
03aa25
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
0
150 (oC)
175
0
25
50
75
100
125
150 175 Tsp (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 4.5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
10 ID (A) 1 10-1
P
Fig 2. Normalized continuous drain current as a function of solder point temperature.
03aa72
Tsp = 25oC RDSon = VDS/ ID
tp = 10 s 100 s
=
tp T
D.C.
10-2
tp
1 ms 10 ms 100 ms
t T
10-3
1
10
VDS (V) 102
Tsp = 25 C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
3 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on metal clad substrate; Figure 4 mounted on printed circuit board; minimum footprint Value 180 400 Unit K/W K/W
7.1 Transient thermal impedance
103 Zth(j-sp) (K/W) = 0.5 102 0.2 0.1 10 0.05 0.02 single pulse 1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
tp T t P
03aa70
=
tp T
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
4 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 44 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 8 V; VDS = 0 V VGS = 2.5 V; ID = 75 mA; Figure 7 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 500 mA; Figure 7 and 8 Tj = 25 C VGS = 1.8 V; ID = 75 mA; Figure 7 and 8 Tj = 25 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss ton toff forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 VDS = 10 V; ID = 200 mA; Figure 11 ID = 0.5 A; VDS = 44 V; VGS = 8 V; Figure 14 100 - - - - - - - - 380 1.0 0.05 0.5 17 7 4 4 11 - - - - 40 30 10 10 15 mS nC nC nC pF pF pF ns ns - 3.1 8 - 2.3 4 - - 2.4 - 5 7.4 - - - 0.01 - 10 1.0 10 100 A A nA 0.4 0.3 - 1.0 - - 1.3 - 2.5 V V V 55 50 75 - - - V V Min Typ Max Unit Static characteristics
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
5 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V Min - - - Typ 0.95 30 30 Max 1.5 - - Unit V ns nC Source-drain diode
03aa73
03aa75
0.7 ID (A) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V) 2V 1.8 V Tj = 25oC VGS = 4.5V
0.7 ID (A) 0.6 0.5 Tj = 25oC
3V
VDS > ID X RDSon
0.4 0.3 0.2 0.1 150oC
1.6 V 1.4 V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (V) 5
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
03aa74
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa28
20 RDSon 18 () 16 14
1.6V
Tj = 25oC
2.2 a 2 1.8 1.6
1.4V 1.8V
12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID (A) 3V VGS = 4.5 V 2V
1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
6 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
2 VGS(th) (V) 1.8 1.6 1.4 1.2 1 typ 0.8 0.6 min 0.4 0.2 0 -60 -20 20 60 100
03aa38
10-1 ID (A) 10-2
03aa89
10-3
min
typ
10-4
10-5
10-6
140 Tj (oC) 180
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 VGS (V)
2
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
0.5 gfs 0.45 (S) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) 0.7 150oC VDS > ID X RDSon Tj = 25oC
03aa76
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
03aa78
102 Ciss, Coss, Crss (pF)
Ciss 10 Coss
Crss 1 10-1 1 10 VDS (V) 102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
7 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
03aa77
1 IS (A) 0.9 0.8
03ab08
VGS = 0 V
8 VGS (V) 7 6 VDS = 44 V Tj = 25oC ID = 0.5A
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) 1.4 1 0 0 Tj = 25oC 150oC 5 4 3 2
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 QG (nC)
1
Tj = 25 C and 150 C; VGS = 0 V
ID = 0.5 A; VDS = 44 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
8 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Fig 15. SOT323.
9397 750 07302 (c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
9 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 01 Revision history CPCN Description Product specification; initial version.
Rev Date 20000814
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
10 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07302
(c) Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
11 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA70)
9397 750 07302
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 14 August 2000
12 of 13
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 August 2000 Document order number: 9397 750 07302

▲Up To Search▲

Price & Availability of BSH121

	To Download BSH121 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .